First Demonstration of High Density Optical Interconnects Integrated with Lasers, Optical Modulators and Photodetectors on a Single Silicon Substrate


Wednesday, 21 September, 2011
14:30 -- 16:00, Le Saleve
We.9.LeSaleve • Optical Interconnect
We.9.LeSaleve.4 • 15:30 (Invited)

First Demonstration of High Density Optical Interconnects Integrated with Lasers, Optical Modulators and Photodetectors on a Single Silicon Substrate

Yutaka Urino1, Takanori Shimizu1, Makoto Okano2, Nobuaki Hatori1, Masashige Ishizaka1, Tsuyoshi Yamamoto1, Takeshi Baba1, Takeshi Akagawa1, Suguru Akiyama1, Tatsuya Usuki1, Daisuke Okamoto1, Makoto Miura1, Masataka Noguchi1, Junichi Fujikata1, Daisuke Shimura3, Hideaki Okayama3, Tai Tsuchizawa4, Toshifumi Watanabe4, Koji Yamada4, Seiichi Itabashi4, Emiko Saito1, Takahiro Nakamura1, Yasuhiko Arakawa5; 1Photonics Electronics Technology Research Association (PETRA), Japan; 2National Institute of Advanced Industrial Science and Technology (AIST), Japan; 3Photonics Electronics Technology Research Association (PETRA), Japan; 4NTT Microsystem Integration Laboratories, Japan; 5Institute of Industrial Science, The University of Tokyo, Japan.
Optical interconnects integrated with lasers, silicon optical modulators and germanium photodetectors on a single silicon substrate were demonstrated for the first time. A 5 Gbps line bit rate and 3.5 Tbps/cm2 transmission density were achieved.
 


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