Monday, 19 September, 2011
14:30 -- 16:15
Le Saleve

Mo.1.LeSaleve • Modulators & Transmitters

Chair: Leo Spiekman; Alphion, United States
 
Mo.1.LeSaleve.1 • 14:30
LARGE-OUTPUT-POWER, ULTRALOW-DRIVING-VOLTAGE (0.5 VPP) OPERATION OF 1.3-UM, 4×25G, EADFB LASER ARRAY FOR DRIVERLESS 100GBE TRANSMITTER
Takeshi Fujisawa1, Sigeru Kanazawa1, Kiyoto Takahata1, Wataru Kobayashi1, Takashi Tadokoro1, Hiroyuki Ishii1, Fumiyoshi Kano1; 1NTT Photonics Laboratories, Japan.
 A large-output-power 1.3-um, 4×25G, EADFB laser array with a novel rear grating DFB laser is developed for 100GbE. Ultralow-driving-voltage operation (0.5 Vpp) is achieved for the first time with clear eye openings after 10-km transmission.
 
Mo.1.LeSaleve.2 • 14:45
10-GHZ ALGAINAS/INP 1.55 ΜM PASSIVELY MODE-LOCKED LASER WITH LOW DIVERGENCE ANGLE AND TIMING JITTER
Lianping Hou1, Mohsin Haji1, John H. Marsh1, Ann C. Bryce1; 1University of Glasgow, United Kingdom.
 A novel 10-GHz passively mode-locked AlGaInAs/InP 1.55μm laser was demonstrated with a low divergence angle (14.7°x27.3°),a timing jitter of 194 fs (4-80 MHz), and an RF linewidth of 2 kHz.
 
Mo.1.LeSaleve.3 • 15:00 (Invited)
FJ/BIT INTEGRATED NANOPHOTONICS BASED ON PHOTONIC CRYSTALS
Masaya Notomi1, Kengo Nozaki1, Shinji Matsuo2, Akihiko Shinya1, Tomonari Sato2, Hideaki Taniyama1; 1NTT Basic Research Laboratories, Japan; 2NTT Photonics Laboratories, Japan.
 We show that a variety of ultrasmall photonic devices with extremely-small consumption energy of ~fJ/bit are realized in photonic crystals, enabling us to integrate a vast number of nanophotonic devices in a single chip for ICT.
 
Mo.1.LeSaleve.4 • 15:30
83 FJ/BIT ENERGY-TO-DATA RATIO OF 850-NM VCSEL AT 17 GB/S
Philip Moser1, Werner Hofmann1, Philip Wolf1, Gerrit Fiol1, James A. Lott2, Nikolay Ledentsov2, Dieter Bimberg1; 1Institute of Solid State Physics & Center of Nanophotonics, Technical University Berlin, Germany; 2VI Systems GmbH, Germany.
 Error-free performance at 17 Gb/s and 25 Gb/s via a 100 m multi-mode fiber link is demonstrated at record-high dissipation-power-efficiencies of 69 fJ/bit and 99 fJ/bit. This corresponds to an energy-to-data ratio of 83/117 fJ/bit.
 
Mo.1.LeSaleve.5 • 15:45
DUAL-CARRIER IQ MODULATOR USING A COMPLEMENTARY FREQUENCY SHIFTER
Hiroshi Yamazaki1, Takashi Saida1, Takashi Goh1, Atsushi Mori1, Shinji Mino1; 1NTT Photonics Laboratories, NTT Corporation, Japan.
 We devised a dual-carrier IQ modulator incorporating a novel complementary frequency shifter. The modulator was fabricated with a PLC-LiNbO3 hybrid integrated circuit, and it successfully generated a 100-Gb/s/pol OFDM-QPSK signal.
 
Mo.1.LeSaleve.6 • 16:00
GENERATION OF 21.3 GBAUD 8PSK SIGNAL USING AN SOA-BASED ALL-OPTICAL PHASE MODULATOR
James M. Dailey1, Rod Webb1, Bob Manning1; 1Tyndall National Institute & Dept of Physics, University College Cork, Ireland.
 We demonstrate a novel SOA-based all-optical π/4 phase modulator producing 21.3 Gbaud 8PSK from 21.3 Gbit/s OOK and 21.3 Gbaud QPSK inputs. Coherent detection-based bit error rate measurements indicate a 2.4 dB excess penalty.

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